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IRF3205LPBF Tech Specifications

MOSFET N-CH 55V 110A TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2002
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Terminal Position SINGLE
Current Rating 110A
Number of Elements 1
Power Dissipation-Max 200W Tc
Power Dissipation 200W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 110A Tc
Rise Time 101ns
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 55V
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.008Ohm
Avalanche Energy Rating (Eas) 264 mJ
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF3205LPBF Documents

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