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IRF3704ZSPBF Tech Specifications

MOSFET N-CH 20V 67A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Resistance 7.9MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 8.9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.55V @ 250μA
Current - Continuous Drain (Id) @ 25°C 67A Tc
Rise Time 38ns
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Recovery Time 17 ns
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 20V
Terminal Form GULL WING
Current Rating 67A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.9m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.2 ns
Continuous Drain Current (ID) 67A
Drain Current-Max (Abs) (ID) 42A
Pulsed Drain Current-Max (IDM) 260A
Nominal Vgs 2.1 V
Length 10.67mm
Radiation Hardening No
RoHS Status RoHS Compliant
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