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IRF3707ZSPBF Tech Specifications

MOSFET N-CH 30V 59A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 12.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 9.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 25μA
Current - Continuous Drain (Id) @ 25°C 59A Tc
Rise Time 41ns
Vgs (Max) ±20V
Turn-Off Delay Time 12 ns
Threshold Voltage 1.8V
Drain Current-Max (Abs) (ID) 42A
Dual Supply Voltage 30V
Recovery Time 59 ns
Height 4.83mm
Width 9.652mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 59A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 59A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 40 mJ
Nominal Vgs 1.8 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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