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IRF3707ZSTRLPBF Tech Specifications

MOSFET N-CH 30V 59A

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®, StrongIRFET™
Part Status Obsolete
Number of Terminations 2
Resistance 9.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 59A
Pulsed Drain Current-Max (IDM) 230A
Avalanche Energy Rating (Eas) 40 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 57W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 25μA
Current - Continuous Drain (Id) @ 25°C 59A Tc
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 42A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
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