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IRF3709STRLPBF Tech Specifications

MOSFET N-CH 30V 90A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.1W Ta 120W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2672pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 9.2 ns
Continuous Drain Current (ID) 90A
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 30V
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 120W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 90A Tc
Rise Time 171ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
Nominal Vgs 20 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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