IRF3805PBF Tech Specifications

IRF3805PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2007
Part Status Active
Number of Terminations 3
Resistance 3.3MOhm
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Turn On Delay Time 150 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 93 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 890A
Height 9.017mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 940 mJ
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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