IRF520NPBF Tech Specifications

IRF520NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 9.7A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 9.5A
Drain to Source Breakdown Voltage 100V
Recovery Time 150 ns
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1998
Part Status Active
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Current Rating 9.7A
Number of Elements 1
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 4.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Rise Time 23ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Dual Supply Voltage 100V
Nominal Vgs 4 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF520NPBF Documents

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