IRF540NLPBF Tech Specifications

IRF540NLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 44m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 3
Resistance 44MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 100V
Terminal Position SINGLE
Current Rating 33A
Number of Elements 1
Power Dissipation-Max 130W Tc
Power Dissipation 130W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 39 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 100V
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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