IRF5810 Tech Specifications

IRF5810 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 6
Terminal Finish TIN LEAD
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 90m Ω @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V
JEDEC-95 Code MO-193AA
Drain-source On Resistance-Max 0.09Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Published 2003
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Operating Temperature (Max) 150°C
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 960mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.9A
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 2.9A
DS Breakdown Voltage-Min 20V
Power Dissipation-Max (Abs) 0.96W
RoHS Status Non-RoHS Compliant
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IRF5810 brand manufacturers: Infineon Technologies, Bonchip stock, IRF5810 reference price. IRF5810 parameters, IRF5810 Datasheet PDF and pin diagram description download.You can use the IRF5810 Pluggable Connectors, DSP Datesheet PDF, find IRF5810 pin diagram and circuit diagram and usage method of function, IRF5810 electronics tutorials.You can download from the Bonchip.
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