IRF5810TRPBF Tech Specifications

IRF5810TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 2 (1 Year)
Resistance 90MOhm
Min Operating Temperature -55°C
Base Part Number IRF5810PBF
Element Configuration Dual
Turn On Delay Time 8.2 ns
FET Type 2 P-Channel (Dual)
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.9A
Rise Time 14ns
Fall Time (Typ) 53 ns
Continuous Drain Current (ID) -2.9A
Gate to Source Voltage (Vgs) 12V
Dual Supply Voltage -20V
FET Feature Logic Level Gate
Rds On Max 90 mΩ
Height 990.6μm
Width 1.4986mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2003
Part Status Obsolete
Termination SMD/SMT
Max Operating Temperature 150°C
Max Power Dissipation 960mW
Number of Elements 2
Power Dissipation 960mW
Power - Max 960mW
Rds On (Max) @ Id, Vgs 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 62 ns
Threshold Voltage -1.2V
Drain to Source Breakdown Voltage -20V
Input Capacitance 650pF
Drain to Source Resistance 90mOhm
Nominal Vgs -1.2 V
Length 3mm
Radiation Hardening No
RoHS Status RoHS Compliant
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