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IRF640NLPBF Tech Specifications
MOSFET N-CH 200V 18A TO-262
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 12 Weeks |
Mounting Type | Through Hole |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Published | 2004 |
JESD-609 Code | e3 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Current Rating | 18A |
Number of Elements | 1 |
Power Dissipation-Max | 150W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 150m Ω @ 11A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 5.5 ns |
Continuous Drain Current (ID) | 18A |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 72A |
Max Junction Temperature (Tj) | 175°C |
Height | 15.01mm |
Width | 4.826mm |
REACH SVHC | No SVHC |
Lead Free | Contains Lead, Lead Free |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Transistor Element Material | SILICON |
Packaging | Tube |
Series | HEXFET® |
Part Status | Active |
Number of Terminations | 3 |
Resistance | 150mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Voltage - Rated DC | 200V |
Peak Reflow Temperature (Cel) | 260 |
[email protected] Reflow Temperature-Max (s) | 30 |
Number of Channels | 1 |
Element Configuration | Single |
Power Dissipation | 150W |
Turn On Delay Time | 10 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 18A Tc |
Rise Time | 19ns |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 23 ns |
Threshold Voltage | 4V |
Drain to Source Breakdown Voltage | 200V |
Avalanche Energy Rating (Eas) | 247 mJ |
Nominal Vgs | 4 V |
Length | 10.668mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
IRF640NLPBF Documents
Download datasheets and manufacturer documentation for IRF640NLPBF
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Datasheets
Others include "IRF64" parts
The following parts include 'IRF64'
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IRF640 | STMicroelectronics | Transistors - FETs, MOSFETs - Single | 2347 |
IRF640 IC | ST | Specialized Hot ICs | 967 |
IRF640 MOS | IR | Specialized Hot ICs | 839 |
IRF640,127 | NXP Semiconductors / Freescale | Transistors - FETs, MOSFETs - Single | 2740 |
IRF640A | SEC | Specialized Hot ICs | 515 |
IRF640B | FSC | Specialized Hot ICs | 2332 |
IRF640B IC | IR | Specialized Hot ICs | 348 |
IRF640BPBF | VB | Specialized Hot ICs | 5000 |
IRF640FP | STMicroelectronics | Transistors - FETs, MOSFETs - Single | 1259 |
IRF640L | Vishay / Siliconix | Transistors - FETs, MOSFETs - Single | 2545 |
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IRF640NLPBF brand manufacturers: Infineon Technologies, Bonchip stock, IRF640NLPBF reference price. IRF640NLPBF parameters, IRF640NLPBF Datasheet PDF and pin diagram description download.You can use the IRF640NLPBF Pluggable Connectors, DSP Datesheet PDF, find IRF640NLPBF pin diagram and circuit diagram and usage method of function, IRF640NLPBF electronics tutorials.You can download from the Bonchip.
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