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IRF6622TRPBF Tech Specifications

MOSFET N-CH 25V 15A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case DirectFET™ Isometric SQ
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 25V
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.6 ns
Continuous Drain Current (ID) 12A
Drain-source On Resistance-Max 0.0063Ohm
Pulsed Drain Current-Max (IDM) 120A
Height 506μm
Width 3.95mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 15A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 34W Tc
Power Dissipation 34W
Turn On Delay Time 9.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 15A Ta 59A Tc
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 13 mJ
Length 4.826mm
Radiation Hardening No
Lead Free Lead Free
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