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IRF6629TR1PBF Tech Specifications

MOSFET N-CH 25V 29A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Supplier Device Package DIRECTFET™ MX
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 2.1MOhm
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 100W Tc
Turn On Delay Time 20 ns
Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 25V
Input Capacitance 4.26nF
Rds On Max 2.1 mΩ
Height 506μm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2006
Part Status Obsolete
Termination SMD/SMT
Max Operating Temperature 150°C
Voltage - Rated DC 25V
Current Rating 29A
Power Dissipation 100W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 29A Ta 180A Tc
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 7.4 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 25V
Drain to Source Resistance 2.7mOhm
Nominal Vgs 1.8 V
Width 5.05mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRF6629TR1PBF Documents

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