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IRF6644TR1PBF Tech Specifications

IRF6644TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case DirectFET™ Isometric MN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Additional Feature LOW CONDUCTION LOSS
Technology MOSFET (Metal Oxide)
Current Rating 10.3A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 17 ns
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 8.3A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 228A
Avalanche Energy Rating (Eas) 86 mJ
Nominal Vgs 2.8 V
Length 6.35mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 3
Resistance 13MOhm
Voltage - Rated DC 100V
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4.8V @ 150μA
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Rise Time 26ns
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
Threshold Voltage 2.8V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 63 ns
Height 506μm
Width 5.05mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRF6644TR1PBF Documents

Download datasheets and manufacturer documentation for IRF6644TR1PBF

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