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IRF6655TRPBF Tech Specifications

MOSFET N-CH 100V 4.2A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 4.2A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 42W
Turn On Delay Time 7.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.8V @ 25μA
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Rise Time 2.8ns
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 11 mJ
Length 4.826mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric SH
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 100V
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4.3 ns
Continuous Drain Current (ID) 4.2mA
Drain-source On Resistance-Max 0.062Ohm
Pulsed Drain Current-Max (IDM) 34A
Height 508μm
Width 3.9624mm
RoHS Status ROHS3 Compliant
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IRF6655TRPBF Documents

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