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IRF6726MTRPBF Tech Specifications

MOSFET N-CH 30V 32A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2007
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 150μA
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Rise Time 30ns
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0017Ohm
Avalanche Energy Rating (Eas) 260 mJ
Height 506μm
Width 5.05mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MT
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6140pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 77nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 180A
Drain Current-Max (Abs) (ID) 32A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.7 V
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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