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IRF6810STRPBF Tech Specifications

MOSFET N CH 25V 16A S1

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -40°C~150°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.1W Ta 20W Tc
Power Dissipation 2.1W
Turn On Delay Time 8.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 25μA
Current - Continuous Drain (Id) @ 25°C 16A Ta 50A Tc
Rise Time 22ns
Vgs (Max) ±16V
Turn-Off Delay Time 11 ns
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0052Ohm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric S1
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.2m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.8 ns
Continuous Drain Current (ID) 16A
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 25V
RoHS Status ROHS3 Compliant
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