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IRF7324TRPBF Tech Specifications

MOSFET 2P-CH 20V 9A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A
Rise Time 36ns
Fall Time (Typ) 190 ns
Continuous Drain Current (ID) -9A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Height 1.75mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 8
Resistance 18mOhm
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -20V
Terminal Form GULL WING
Current Rating -9A
Base Part Number IRF7324PBF
Element Configuration Dual
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 170 ns
Threshold Voltage -1V
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 71A
Recovery Time 270 ns
FET Feature Logic Level Gate
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF7324TRPBF Documents

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