IRF7329TRPBF Tech Specifications

IRF7329TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Active
Number of Terminations 8
Max Power Dissipation 2W
Current Rating -9.2A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 900mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Turn-Off Delay Time 340 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
FET Feature Logic Level Gate
Length 4.9784mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -12V
Terminal Form GULL WING
Base Part Number IRF7329PBF
Element Configuration Dual
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Rise Time 8.6ns
Fall Time (Typ) 260 ns
Continuous Drain Current (ID) 9.2A
Drain-source On Resistance-Max 0.017Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.4986mm
Width 3.9878mm
RoHS Status ROHS3 Compliant
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