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IRF7379TRPBF Tech Specifications

MOSFET N/P-CH 30V 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Current Rating 5.8A
Number of Elements 2
Power Dissipation 2.5W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.8A 4.3A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.4986mm
Width 3.9878mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 8
Max Power Dissipation 2.5W
Terminal Form GULL WING
Base Part Number IRF7379PBF
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Continuous Drain Current (ID) 5.8A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 46A
FET Feature Standard
Length 4.9784mm
Radiation Hardening No
Lead Free Lead Free
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