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IRF7413ZTRPBF Tech Specifications

IRF7413ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 10MOhm
Voltage - Rated DC 30V
Terminal Position DUAL
Current Rating 13A
Row Spacing 6.3 mm
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.8 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Recovery Time 36 ns
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 25μA
Current - Continuous Drain (Id) @ 25°C 13A Ta
Rise Time 6.3ns
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 32 mJ
Nominal Vgs 1.8 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF7413ZTRPBF Documents

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