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IRF7507PBF Tech Specifications

MOSFET N/P-CH DUAL 20V MICRO-8

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Subcategory Other Transistors
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.14Ohm
DS Breakdown Voltage-Min 20V
FET Feature Logic Level Gate
Height 910μm
Width 3.05mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Published 1998
Part Status Discontinued
Number of Terminations 8
Max Operating Temperature 150°C
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.25W
Base Part Number IRF7507PBF
Element Configuration Dual
Power Dissipation 1.25W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 700mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 2.4A 1.7A
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.4A
Drain Current-Max (Abs) (ID) 1.3A
Pulsed Drain Current-Max (IDM) 19A
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 700 mV
Length 3.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF7507PBF Documents

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