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IRF7607TRPBF Tech Specifications

MOSFET N-CH 20V 6.5A MICRO8

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2001
Part Status Active
Number of Terminations 8
Voltage - Rated DC 20V
Terminal Position DUAL
Current Rating 6.5A
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Rise Time 11ns
Vgs (Max) ±12V
Turn-Off Delay Time 36 ns
Threshold Voltage 1.2V
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 50A
Length 3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 2 (1 Year)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Height 860μm
Width 3mm
REACH SVHC No SVHC
Lead Free Contains Lead
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IRF7607TRPBF Documents

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