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IRF7755 Tech Specifications

MOSFET 2P-CH 20V 3.9A 8-TSSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 8
Terminal Finish MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Fall Time (Typ) 61 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
Length 3mm
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -20V
Terminal Form GULL WING
Current Rating -3.7A
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn On Delay Time 9 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 51m Ω @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 15V
Rise Time 13ns
Turn-Off Delay Time 89 ns
JEDEC-95 Code MO-153AA
Drain-source On Resistance-Max 0.051Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1mm
Width 4.4mm
Lead Free Contains Lead
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