IRF7834TRPBF Tech Specifications

MOSFET N-CH 30V 19A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.5MOhm
Voltage - Rated DC 30V
Current Rating 19A
Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.25V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Ta
Rise Time 14.3ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Gate to Source Voltage (Vgs) 20V
Height 1.4986mm
Width 3.9878mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Obsolete
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Turn On Delay Time 13.7 ns
Rds On (Max) @ Id, Vgs 4.5m Ω @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3710pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 19A
Drain to Source Breakdown Voltage 30V
Length 4.9784mm
Radiation Hardening No
Lead Free Lead Free
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IRF7834TRPBF Documents

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