IRF7842TRPBF Tech Specifications

IRF7842TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 5MOhm
Voltage - Rated DC 40V
Terminal Position DUAL
Current Rating 18A
Number of Channels 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 250μA
Current - Continuous Drain (Id) @ 25°C 18A Ta
Rise Time 12ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Threshold Voltage 2.25V
Drain to Source Breakdown Voltage 40V
Recovery Time 150 ns
Nominal Vgs 2.25 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Output Current 2.5A
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 40V
Max Junction Temperature (Tj) 150°C
Height 1.75mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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IRF7842TRPBF Documents

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