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IRF7862TRPBF Tech Specifications

MOSFET N-CH 30V 21A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2007
Part Status Active
Number of Terminations 8
Resistance 3.3MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 21A Ta
Rise Time 19ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 350 mJ
Height 1.4986mm
Width 3.9878mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4090pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 21A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2.35 V
Length 4.9784mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRF7862TRPBF Documents

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