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IRF7902TRPBF Tech Specifications

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 1.4W 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 25μA
Current - Continuous Drain (Id) @ 25°C 6.4A 9.7A
Continuous Drain Current (ID) 9.7A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.4986mm
Width 3.9878mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 8
Resistance 22.6MOhm
Max Power Dissipation 2W
Base Part Number IRF7902PBF
Element Configuration Dual
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22.6m Ω @ 6.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 7.3 mJ
FET Feature Logic Level Gate
Length 4.9784mm
Radiation Hardening No
Lead Free Lead Free
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