IRF8010STRLPBF Tech Specifications

IRF8010STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated DC 100V
Terminal Form GULL WING
Current Rating 80A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 260W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 45A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 120 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 15mOhm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 260W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 130ns
Vgs (Max) ±20V
Turn-Off Delay Time 61 ns
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 75A
Dual Supply Voltage 100V
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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