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IRF8113TRPBF Tech Specifications

MOSFET N-CH 30V 17.2A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Row Spacing 6.3 mm
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Rds On (Max) @ Id, Vgs 5.6m Ω @ 17.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.5 ns
Continuous Drain Current (ID) 17.2A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Active
Termination SMD/SMT
Resistance 5.6MOhm
Voltage - Rated DC 30V
Current Rating 16.6A
Configuration Single
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17.2A Ta
Rise Time 8.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 17 ns
Threshold Voltage 2.2V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2.2 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF8113TRPBF Documents

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