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IRF8734TRPBF Tech Specifications

IRF8734TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 50μA
Current - Continuous Drain (Id) @ 25°C 21A Ta
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 20V
Height 1.4986mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 8
Resistance 3.5MOhm
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 21A
Drain to Source Breakdown Voltage 30V
Width 3.9878mm
RoHS Status ROHS3 Compliant
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