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IRF8788PBF Tech Specifications

IRF8788PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Discontinued
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8m Ω @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5720pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Recovery Time 36 ns
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 2.8MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 24A Ta
Rise Time 24ns
Vgs (Max) ±20V
Turn-Off Delay Time 23 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 230 mJ
Nominal Vgs 1.8 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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