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IRF8852TRPBF Tech Specifications

MOSFET 2N-CH 25V 7.8A 8TSSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature ULTRA LOW RESISTANCE
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Turn-Off Delay Time 70.8 ns
JEDEC-95 Code MO-153AA
Drain-source On Resistance-Max 0.0113Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Length 3.0988mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
Part Status Obsolete
Number of Terminations 8
Max Power Dissipation 1W
Base Part Number IRF8852PBF
Element Configuration Dual
Power Dissipation 1W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.3m Ω @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1151pF @ 20V
Rise Time 10.9ns
Fall Time (Typ) 28.9 ns
Continuous Drain Current (ID) 7.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
FET Feature Logic Level Gate
Radiation Hardening No
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IRF8852TRPBF Documents

Download datasheets and manufacturer documentation for IRF8852TRPBF

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IRF8852TRPBF International Rectifier (Infineon Technologies) Transistors - FETs, MOSFETs - Arrays 10000
IRF8852TRPBF. IR Specialized Hot ICs 323

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