IRF8910TRPBF Tech Specifications

IRF8910TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Base Part Number IRF8910PBF
Element Configuration Dual
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.55V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Fall Time (Typ) 4.1 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 20V
FET Feature Logic Level Gate
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Termination SMD/SMT
Resistance 13.4MOhm
Voltage - Rated DC 20V
Current Rating 10A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.2 ns
Rds On (Max) @ Id, Vgs 13.4m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Rise Time 10ns
Turn-Off Delay Time 9.7 ns
Threshold Voltage 2.55V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 2.55 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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