IRF9332PBF Tech Specifications

IRF9332PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 25μA
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Rise Time 47ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 9.8A
Gate to Source Voltage (Vgs) 20V
Recovery Time 54 ns
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Discontinued
Number of Terminations 8
Subcategory Other Transistors
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 17.5m Ω @ 9.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 73 ns
Threshold Voltage -1.9V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -1.9 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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