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IRF9383MTRPBF Tech Specifications

IRF9383MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.1W Ta 113W Tc
Power Dissipation 2.1W
Turn On Delay Time 29 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 22A Ta 160A Tc
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 22A
Drain-source On Resistance-Max 0.0029Ohm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 2.9m Ω @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 115 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
RoHS Status ROHS3 Compliant
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IRF9383MTRPBF Documents

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