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IRF9520NPBF Tech Specifications

IRF9520NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 480mOhm
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 48W
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 480m Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 100V
Turn-Off Delay Time 28 ns
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 27A
Recovery Time 150 ns
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Published 1998
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -6.8A
Lead Pitch 2.54mm
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Rise Time 47ns
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) -6.8A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage -100V
Nominal Vgs -4 V
Length 10.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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