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IRF9540NLPBF Tech Specifications

MOSFET P-CH 100V 23A TO262-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 117mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Number of Channels 1
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 67ns
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage 100V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation-Max 3.1W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 117m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 51 ns
Continuous Drain Current (ID) -23A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 92A
Avalanche Energy Rating (Eas) 84 mJ
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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