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IRF9952QTRPBF Tech Specifications

MOSFET N/P-CH 30V 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Published 2014
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 2W
Power Dissipation 2W
FET Type N and P-Channel
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.5A 2.3A
Drain to Source Voltage (Vdss) 30V
Gate to Source Voltage (Vgs) 20V
FET Feature Logic Level Gate
Height 1.4986mm
Width 3.9878mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Cut Tape (CT)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Base Part Number IRF9952QPBF
Power - Max 2W
Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Continuous Drain Current (ID) 2.3A
Input Capacitance 190pF
Rds On Max 100 mΩ
Length 4.9784mm
Radiation Hardening No
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