IRF9953PBF Tech Specifications

IRF9953PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 2W
Base Part Number IRF9953PBF
Element Configuration Dual
Turn On Delay Time 9.7 ns
FET Type 2 P-Channel (Dual)
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A
Rise Time 14ns
Fall Time (Typ) 6.9 ns
Continuous Drain Current (ID) -2.3A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 190pF
Drain to Source Resistance 250mOhm
Nominal Vgs -1 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1997
Part Status Discontinued
Max Operating Temperature 150°C
Voltage - Rated DC -30V
Current Rating -2.3A
Number of Elements 2
Power Dissipation 2W
Power - Max 2W
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 20 ns
Threshold Voltage -1V
Drain to Source Breakdown Voltage -30V
FET Feature Standard
Rds On Max 250 mΩ
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
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