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IRF9Z24NPBF Tech Specifications

IRF9Z24NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 175mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 175m Ω @ 7.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 23 ns
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 96 mJ
Nominal Vgs -4 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Current Rating -12A
Number of Elements 1
Element Configuration Single
Power Dissipation 45W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12A Tc
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) -12A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage -55V
Recovery Time 71 ns
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRF9Z24NPBF Documents

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