IRF9Z34NLPBF Tech Specifications

MOSFET P-CH 55V 19A TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Threshold Voltage -4V
Drain-source On Resistance-Max 0.1Ohm
Pulsed Drain Current-Max (IDM) 68A
Nominal Vgs -4 V
Length 10.67mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Terminal Position SINGLE
Current Rating -19A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 68W Tc
Power Dissipation 68W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Tc
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) -19A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Avalanche Energy Rating (Eas) 180 mJ
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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