IRFB260NPBF Tech Specifications

IRFB260NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 56A Tc
Rise Time 64ns
Vgs (Max) ±20V
Turn-Off Delay Time 52 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 450 mJ
Nominal Vgs 4 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
Part Status Active
Number of Terminations 3
Resistance 40Ohm
Voltage - Rated DC 200V
Current Rating 56A
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 56A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Recovery Time 360 ns
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
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