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IRFB31N20DPBF
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IRFB31N20DPBF Tech Specifications
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 14 Weeks |
Mount | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Packaging | Tube |
Series | HEXFET® |
Part Status | Not For New Designs |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Current Rating | 31A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 200W |
Turn On Delay Time | 16 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 5.5V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 31A Tc |
Rise Time | 38ns |
Vgs (Max) | ±30V |
Turn-Off Delay Time | 26 ns |
Threshold Voltage | 5.5V |
Gate to Source Voltage (Vgs) | 30V |
Dual Supply Voltage | 200V |
Recovery Time | 300 ns |
Height | 8.763mm |
Width | 4.69mm |
REACH SVHC | No SVHC |
Lead Free | Contains Lead, Lead Free |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Contact Plating | Tin |
Mounting Type | Through Hole |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Published | 1998 |
JESD-609 Code | e3 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Through Hole |
Resistance | 82mOhm |
Voltage - Rated DC | 200V |
Peak Reflow Temperature (Cel) | 250 |
[email protected] Reflow Temperature-Max (s) | 30 |
Power Dissipation-Max | 3.1W Ta 200W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 82m Ω @ 18A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2370pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 10 ns |
Continuous Drain Current (ID) | 31A |
JEDEC-95 Code | TO-220AB |
Drain to Source Breakdown Voltage | 200V |
Avalanche Energy Rating (Eas) | 420 mJ |
Nominal Vgs | 5.5 V |
Length | 10.5156mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
IRFB31N20DPBF Documents
Download datasheets and manufacturer documentation for IRFB31N20DPBF
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Datasheets
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IRFB31N20DPBF brand manufacturers: Infineon Technologies, Bonchip stock, IRFB31N20DPBF reference price. IRFB31N20DPBF parameters, IRFB31N20DPBF Datasheet PDF and pin diagram description download.You can use the IRFB31N20DPBF Pluggable Connectors, DSP Datesheet PDF, find IRFB31N20DPBF pin diagram and circuit diagram and usage method of function, IRFB31N20DPBF electronics tutorials.You can download from the Bonchip.
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