IRFB38N20DPBF Tech Specifications

MOSFET N-CH 200V 43A TO-220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 320W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 43A Tc
Rise Time 95ns
Vgs (Max) ±20V
Turn-Off Delay Time 29 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Dual Supply Voltage 200V
Recovery Time 240 ns
Height 9.017mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2002
Part Status Active
Number of Terminations 3
Resistance 54Ohm
Voltage - Rated DC 200V
Current Rating 38A
Power Dissipation-Max 3.8W Ta 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 54m Ω @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 44A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 460 mJ
Nominal Vgs 5 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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