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IRFB4212PBF Tech Specifications

MOSFET N-CH 100V 18A TO-220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 100V
Current Rating 18A
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.7 ns
Transistor Application AMPLIFIER
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 18A Tc
Rise Time 28ns
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 57A
Avalanche Energy Rating (Eas) 25 mJ
Nominal Vgs 5 V
Length 10.6426mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 72.5mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 72.5m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 3.9 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 62 ns
Height 9.02mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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