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IRFB4233PBF Tech Specifications

MOSFET N-CH 230V 56A TO-220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 370W Tc
Power Dissipation 370W
FET Type N-Channel
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 56A Tc
Drain to Source Voltage (Vdss) 230V
Vgs (Max) ±30V
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 30V
Dual Supply Voltage 276V
Drain to Source Resistance 37mOhm
Nominal Vgs 5 V
Length 10.6426mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2007
Part Status Obsolete
Termination Through Hole
Min Operating Temperature -40°C
Number of Elements 1
Element Configuration Single
Turn On Delay Time 31 ns
Rds On (Max) @ Id, Vgs 37mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 51 ns
Threshold Voltage 5V
Drain to Source Breakdown Voltage 230V
Input Capacitance 5.51nF
Rds On Max 37 mΩ
Height 16.51mm
Width 4.82mm
REACH SVHC No SVHC
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