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IRFB61N15DPBF Tech Specifications

MOSFET N-CH 150V 60A TO-220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Not For New Designs
Number of Terminations 3
Resistance 32Ohm
Voltage - Rated DC 150V
Current Rating 60A
Power Dissipation-Max 2.4W Ta 330W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 51 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 520 mJ
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 60A Tc
Rise Time 110ns
Vgs (Max) ±30V
Turn-Off Delay Time 28 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5.5 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRFB61N15DPBF Documents

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