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IRFH4210TRPBF Tech Specifications

MOSFET N-CH 25V 45A 8PQFN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~150°C TJ
Published 2015
Part Status Obsolete
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Turn On Delay Time 20 ns
Rds On (Max) @ Id, Vgs 1.35m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4812pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Threshold Voltage 1.6V
Height 900μm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 5
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.1MOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.6W Ta 104W Tc
Power Dissipation 3.6W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.1V @ 100μA
Current - Continuous Drain (Id) @ 25°C 45A Ta
Rise Time 44ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Length 6mm
Radiation Hardening No
RoHS Status RoHS Compliant
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IRFH4210TRPBF Documents

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