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IRFH4251DTRPBF Tech Specifications

MOSFET 2N-CH 25V 64A/188A PQFN

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Not For New Designs
Number of Terminations 8
Subcategory FET General Purpose Power
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 31W 63W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 35μA
Current - Continuous Drain (Id) @ 25°C 64A 188A
Drain to Source Voltage (Vdss) 25V
Threshold Voltage 1.6V
Drain Current-Max (Abs) (ID) 45A
Avalanche Energy Rating (Eas) 61 mJ
FET Feature Logic Level Gate
Length 6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series FASTIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 63W
Element Configuration Dual
Case Connection SOURCE
FET Type 2 N-Channel (Dual), Schottky
Rds On (Max) @ Id, Vgs 3.2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Continuous Drain Current (ID) 188A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0046Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 900μm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
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